1

GaP Size

2"

2

Diameter mm

50.8±0.5

3

Growth Method

LEC

4

Conductivity Type

P-type/Zn-doped,N-type/(S,Si,Te)-doped,Un-doped

5

Orientation

<111>±0.5°

6

Thickness μm

(300-400)±20

7

Resistivity Q-cm

0.003-0.3

8

Orientation Flat(OF)mm

16±1

9

Identification Flat(IF)mm

8±1

10

Hall Mobility cm2N.s min

100

11

Carrier Concentration cm-³

(2-20)E17

12

Dislocation Density cm²max

2.00E+05

13

Surface Finish

P/E,P/P

14

Packing

Single wafer container sealed in aluminum composite bag,carton box outside