尺寸Size

2”

4”

直径Diameter

晶型Crystal type

50.8±0.3mm

Single

100.0±0.3mm crystal

晶面指向Orientation

(0001)Ga face

斜 切 角 ( C 偏 M )

C-plane off angle toward M-axis

0.5°±0,15°

斜 切 角 ( C 偏 A )

C-plane off angle toward A-axis

0°±0.15°

002)面半峰宽(002)FW HM

<100 arcsec

(102)面半峰宽(102)FW HM

曲率半径Lattice radius of curvature

<100 arcsec

>10m(measured at 80%x diameter)

电学参数Electricalspecification

掺杂元素Dopingelements

室温电阻率(300 K)

Room temperature resistivity

(300K)

N-type(Silicon)

≤0.05 ohm-cm

UID

≤0.2 ohm-cm

Semi-Insulating(Carbon)

>1E8 ohm-cm

形貌参数Shapespecification 主参考晶面向

Majorflatorientation

主参考面长度Majorflat length

M-plane(10-10),±2°(sta

16±1mm

ndard);±0.1°(laser grade)

32±1 mm

次参考晶面

Minorflatorientation

Ga face,90°clockwise from the major orientation flat plane

次参考面长度Minorflat length

8±1 mm

18±1 mm

厚度Thickness

400±30μm/450±30 μm

总厚度变化TTV

≤15μm

≤30μm

粗糙度Sa

弯曲度Bow

≤0.3 nm(10 -10μm-10μm

μm×10μm)

-40μm-20μm

凹坑、通孔等级划分Pits grading system

Density(Pits/cm²)

2”(pits)

4”(pits)

工业级Production 研发级Research

<0.5

≤1.5

≤10

≤30

≤40 ≤120

实 验 级 D u mm y

≤2.5

≤50

≤200

边缘轮廓Edge bevel

背面表面处理Back-side surface

Beveled

Polished;Etched

*可根据客户需求定制。Can be customized according to customer needs.