1

Indium Phosphide Single Crystal

2"

3"

4"

2

Diameter mm

50.8±0.5

76.2±0.5

100±0.5

3

Growth Method

VGF

VGF

VGF

4

Conductivity

PIZn-doped,N/(S-doped or un-doped),Semi-insulating

5

Orientation

(100)±0.5°,(111)±0.5°

6

Thickness μm

350±25

600±25

600±25

7

Orientation Flat mm

16±2

22±1

32.5±1

8

Identification Flat mm

8±1

11±1

18±1

9

Mobility cm2/V.s

50-70,>2000,(1.5-4)E3

10

Carrier Concentration cm-3

(0.6-6)E18,≤3E16

11

TTV μm max

10

10

10

12

Bow μm max

10

10

10

13

Warp μm max

15

15

15

14

Dislocation Density cm-2 max

500

1000

2000

15

Surface Finish

P/E,P/P

P/E,P/P

P/E,P/P

16

Packing

Single wafer container sealed in aluminum composite bag.