1

SiC Size

2”

3"

4”

6"

2

Diameter mm

50.80.38

76.20.38

1000.5

1500.5

3

Growth Method

MOCVD

MOCVD

MOCVD

MOCVD

4

Conductivity Type

4H-N,6H-N,4H-SI,6H-SI

5

Resistivity Q-cm

0.015-0.028;0.02-0.1;>1E5

6

Orientation

0°±0.5°;4.0°towards<1120>

7

Thickness μm

330±25

330±25

(350-500)±25

(350-500)±25

8

Primary Flat Location

<1-100>±5°

<1-100>±5°

<1-100>±5°

<1-100>±5°

9

Primary Flat Length mm

16±1.7

22.2±3.2

32.5±2

47.5±2.5

10

Secondary Flat Location

Silicon face up:90°,clockwise from prime flat ±5.0°

11

Secondary Flat Length mm

8±1.7

11.2±1.5

18±2

22±2.5

12

TTV μm max

15

15

15

15

13

Bow μm max

40

40

40

40

14

Warp μm max

60

60

60

60

15

Edge Exclusion mm max

1

2

3

3

16

Micropipe Density cm-2

<5,industrial;<15,lab;<50,dummy

17

Dislocation cm-2

<3000,industrial;<20000,lab;<500000,dummy

18

Surface Roughness nm max

1(Polished),0.5(CMP)

19

Cracks

None,for industrial grade

20

Hexagonal Plates

None,for industrial grade

21

Scratches

≤3mm,total length less than substrate diameter

22

Edge Chips

None,for industrial grade

23

Packing

Single wafer container sealed in aluminum composite bag.